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MRF8P23160WHR3 - RF Power Field Effect Transistors

General Description

Part Number C1, C4, C5 0.2 pF Chip Capacitors ATC600F0R2BT250XT C2, C3 0.3 pF Chip Capacitors ATC600F0R3BT250XT C6 3.3 pF Chip Capacitor ATC600F3R3BT250XT C7 5.6 pF Chip Capacitor ATC600F5R6BT250XT C8, C9, C12, C13 6.8 pF Chip Capacitors ATC600F6R8BT250XT C10, C11 8.2 pF Chip Capacit

Key Features

  • Designed for Wide Instantaneous Bandwidth.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8P23160WHSR3 RF Power Field Effect Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. • CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeolt@s, 0.01% Probability on CCDF. Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 13.9 14.1 13.8 ηD Output PAR ACPR (%) (dB) (dBc) 37.1 7.9 --31.0 38.3 7.7 --32.2 38.3 7.4 --33.1 MRF8P23160WHR3 MRF8P23160WHSR3 2300--2400 MHz, 30 W AVG.