MRF8P23160WHSR3

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF8P23160WHSR3 datasheet by Freescale Semiconductor (now NXP Semiconductors).

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF8P23160WHSR3 Datasheet Details

Part number	MRF8P23160WHSR3
Datasheet	MRF8P23160WHSR3 MRF8P23160WHR3 Datasheet (PDF)
File Size	530.30 KB
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
Description	RF Power Field Effect Transistors

MRF8P23160WHSR3 Overview

Freescale Semiconductor Technical Data Document Number: 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el...

MRF8P23160WHSR3 Key Features

Designed for Wide Instantaneous Bandwidth

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MRF8P23160WHSR3 Datasheet Details

MRF8P23160WHSR3 Overview

MRF8P23160WHSR3 Key Features

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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