MRF8P23160WHSR3 Datasheet (RF Power Field Effect Transistors)

Part: MRF8P23160WHSR3
Manufacturer: Freescale Semiconductor
Size: 530.30 KB

Related Freescale Semiconductor Datasheets

Part Number	Description
MRF8P23160WHR3	RF Power Field Effect Transistors
MRF8P23080HR3	RF Power Field Effect Transistors
MRF8P23080HSR3	RF Power Field Effect Transistors
MRF8P20160HSR3	RF Power Field Effect Transistor
MRF8P26080HR3	RF Power Field Effect Transistors

Freescale Semiconductor datasheets

MRF8P23160WHSR3 Description

Freescale Semiconductor Technical Data Document Number: 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el...

MRF8P23160WHSR3 Key Features

Designed for Wide Instantaneous Bandwidth