MRF8P23080HSR3 Description
Freescale Semiconductor Technical Data Document Number: 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8P23080HSR3 Key Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large--Signal Load--Pull Parameters and mon Source S--Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS pliant
- NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel