MRF8P9300HSR6
MRF8P9300HSR6 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF8P9300HR6 comparator family.
- Part of the MRF8P9300HR6 comparator family.
Freescale Semiconductor Technical Data
Document Number: MRF8P9300H Rev. 0, 11/2009
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Single- Carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 hD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc)
-...
