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MRF8P9300HSR6 - RF Power Field Effect Transistors

Download the MRF8P9300HSR6 datasheet PDF. This datasheet also covers the MRF8P9300HR6 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Short RF Bead 0.2 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 2.7 pF Chip Capacitors 5.1 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capac

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8P9300HR6_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8P9040GNR1 RF Power Field Effect Transistors NXP
MRF8P9040NBR1 RF Power Field Effect Transistors NXP
MRF8P9040NR1 RF Power Field Effect Transistors NXP
MRF8P20160HR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRF8P20160HSR3 RF Power Field Effect Transistors Motorola Semiconductor Products

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8P9300HR6 RF Power Field Effect Transistors
MRF8P20160HSR3 RF Power Field Effect Transistor
MRF8P23080HR3 RF Power Field Effect Transistors
MRF8P23080HSR3 RF Power Field Effect Transistors
MRF8P23160WHR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 hD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc) - 37.3 - 37.1 - 36.7 MRF8P9300HR6 MRF8P9300HSR6 920 - 960 MHz, 100 W AVG.