MRF8P26080HR3 - RF Power Field Effect Transistors
Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.3 μF, 50 V Chip Capacitors GRM32DR71H335KA88B C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C13, C14 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L C15, C16 0.6 pF Chip Capacitors A
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Doherty Single Carrier W CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magn
MRF8P26080HR3 Features
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
