MRF8P26080HR3 Datasheet - Freescale Semiconductor

MRF8P26080HR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for W Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.

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Datasheet Details

Part number:

MRF8P26080HR3

Manufacturer:

Freescale Semiconductor

File Size:

558.08 KB

Description:

RF Power Field Effect Transistors

Features

* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use

Applications

* with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg. , IQ

MRF8P26080HR3 Distributors

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MRF8P26080HR3 Power Field Effect Transistors Freescale Semiconductor

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