MRF8P9300HR6 Datasheet - Freescale Semiconductor

MRF8P9300HR6 RF Power Field Effect Transistors

Short RF Bead 0.2 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 2.7 pF Chip Capacitors 5.1 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capac.

Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Cha.

MRF8P9300HR6 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source

MRF8P9300HR6_FreescaleSemiconductor.pdf