MRF8P9300HR6 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev.0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Short RF Bead 0.

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Datasheet Specifications

Part number: MRF8P9300HR6
Manufacturer: Freescale Semiconductor
File Size: 411.05 KB
Datasheet: MRF8P9300HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source

Applications

* with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input

MRF8P9300HR6 Distributors

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MRF8P9300HR6 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF8P9300HR6-like datasheet