* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* Optimiz
MRF8S18120HSR3 Datasheet (323.53 KB)
MRF8S18120HSR3
Freescale Semiconductor
323.53 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF8S18120H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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