* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative
MRF8S18260HSR6 Datasheet (499.80 KB)
MRF8S18260HSR6
Freescale Semiconductor
499.80 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF8S18260H Rev. 1, 2/2012
RF Power Field Effect Transistors
N
*Channel Enhancement
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