Description
Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev.1, 2/2012 RF Power Field Effect Transistors N *Channel Enhancement
Part Number
C1
2.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative
Applications
* with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t
* . =8C4a7rM4riHWerzaW,ttIsn
* pCAuDvtgMS. ,iAgIQnPaeMlrPfaoAgrRnmita=und7ce. e5C: dVliBpDpD@in=g03,.00C1hV%aon