Part number:
MRF8S19140HR3
Manufacturer:
Freescale Semiconductor
File Size:
435.48 KB
Description:
Rf power field effect transistors.
MRF8S19140HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF8S19140HR3
Manufacturer:
Freescale Semiconductor
File Size:
435.48 KB
Description:
Rf power field effect transistors.
MRF8S19140HR3, RF Power Field Effect Transistors
10 pF Chip Capacitors 0.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 6.8 μF, 50 V Chip Capacitor 47 μF, 16 V Tantalum Capacitor .01 μF, 100 V Chip Capacitors .56 μF, 50 V Chip Capacitors 5.1 Ω, 1/8 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55
Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev.
0, 5/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA, W CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA,
MRF8S19140HR3 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative
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