MRF8S19140HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF8S19140HR3, RF Power Field Effect Transistors

10 pF Chip Capacitors 0.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 6.8 μF, 50 V Chip Capacitor 47 μF, 16 V Tantalum Capacitor .01 μF, 100 V Chip Capacitors .56 μF, 50 V Chip Capacitors 5.1 Ω, 1/8 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55

Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev.

0, 5/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA, W CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA,

MRF8S19140HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative