MRF8S19140HSR3, MRF8S19140HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF8S19140HSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev.0, 5/2010 RF Power Field Effect Transistors N *.
10 pF Chip Capacitors 0.

MRF8S19140HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative

MRF8S19140HSR3 Applications

* with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3

📥 Download Datasheet

MRF8S19140HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8S19140HSR3, MRF8S19140HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF8S19140HSR3, MRF8S19140HR3
Manufacturer: Freescale Semiconductor
File Size: 435.48 KB
Datasheet: MRF8S19140HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF8S19140HSR3, MRF8S19140HR3.
Please refer to the document for exact specifications by model.

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