MRF8S19140HSR3, MRF8S19140HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF8S19140HSR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF8S19140HSR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF8S19140HSR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF8S19140HSR3, MRF8S19140HR3
Manufacturer	Freescale Semiconductor
File Size	435.48 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S19140HR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF8S19140HSR3, MRF8S19140HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF8S19140HSR3 datasheet.

MRF8S19140HSR3 Product details

Description

10 pF Chip Capacitors 0.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 6.8 μF, 50 V Chip Capacitor 47 μF, 16 V Tantalum Capacitor .01 μF, 100 V Chip Capacitors .56 μF, 50 V Chip Capacitors 5.1 Ω, 1/8 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Part Number ATC100B110JT500XT ATC800B0R8BT500XT GRM55DR61H106KA88L MCRH63V337M13X21--RH C4532X7R1H685KT T491D476K016AT C1825C103K1GACTU C1825C564J5RACTU CRCW08055R10JNEA CRCW12064R75FNEA AD255A Manufa

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Jun 30, 2010 |