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MRF8S18210WGHSR3 Datasheet - Freescale Semiconductor

MRF8S18210WGHSR3 RF Power Field Effect Transistors

2.2 μF Chip Capacitors Part Number C3225X7R2A225M C3, C4, C5, C6, C7, C8 10 μF Chip Capacitors C5750X7S2A106MT C9, C10, C11, C12, C13, C14 8.2 pF Chip Capacitors ATC100B8R2BT500XT C15 1.3 pF Chip Capacitor ATC100B1R3BT500XT C16, C21 1.8 pF Chip Capacitors ATC100B1R8BT500XT C17 2.0 pF Chi.
Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t .=8C4a5rM0riHWerzaW,ttIsn pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: .

MRF8S18210WGHSR3 Features

* Designed for Wide Instantaneous Bandwidth Applications

* Designed for Wideband Applications that Require 40 MHz Signal Bandwidth

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

MRF8S18210WGHSR3 Datasheet (745.76 KB)

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Datasheet Details

Part number:

MRF8S18210WGHSR3

Manufacturer:

Freescale Semiconductor

File Size:

745.76 KB

Description:

Rf power field effect transistors.

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MRF8S18210WGHSR3 Power Field Effect Transistors Freescale Semiconductor

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