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MRF8S9260HSR3, MRF8S9260HR3 RF Power Field Effect Transistors

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Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for CDMA.
Part Number C1, C6, C9, C12, C16 36 pF Chip Capacitors ATC100B360JT500XT C2 0.

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This datasheet PDF includes multiple part numbers: MRF8S9260HSR3, MRF8S9260HR3. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MRF8S9260HSR3, MRF8S9260HR3
Manufacturer
Freescale Semiconductor
File Size
436.33 KB
Datasheet
MRF8S9260HR3_FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF8S9260HSR3, MRF8S9260HR3.
Please refer to the document for exact specifications by model.

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Sour

Applications

* with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* BITDyaQpni=dcwa1li7dS0tihn0g=mle3A
* . ,8CP4aorMuritHe=rzW,7I5n
* pWCuDattMStsiAgAnPvaeglr. P,foAIQrRmMa=na7cg. en5:itdVuBdDeD@C=0l2ip.80p1iVn%ogl,tPsCr,

MRF8S9260HSR3 Distributors

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Freescale Semiconductor MRF8S9260HSR3-like datasheet