MRF8S9102NR3 - RF Power Field Effect Transistor
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =
