MRF8S9102NR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N *Channel Enhancement *Mode Lateral MOSFET Designed for CDMA .

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Datasheet Specifications

Part number: MRF8S9102NR3
Manufacturer: Freescale Semiconductor
File Size: 803.11 KB
Datasheet: MRF8S9102NR3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Applications

* with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84

MRF8S9102NR3 Distributors

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MRF8S9102NR3 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF8S9102NR3-like datasheet