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MRF8S9102NR3 Datasheet - Freescale Semiconductor

MRF8S9102NR3 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =.

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Datasheet Details

Part number:

MRF8S9102NR3

Manufacturer:

Freescale Semiconductor

File Size:

803.11 KB

Description:

Rf power field effect transistor.

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MRF8S9102NR3 MRF8S9102NR3 Power Field Effect Transistor Freescale Semiconductor

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