MRFE6S9201HR3 Datasheet (Motorola Semiconductor Products)

MRFE6S9201HR3, RF Power Field Effect Transistors

Short RF Beads 33 pF Chip Capacitors 10 μF, 50 V Tantalum Capacitors 0.6 - 4.5 pF Variable Capacitors, Gigatrim 3.3 pF Chip Capacitors 4.7 pF Chip Capacitors 15 pF Chip Capacitors 1.0 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 1.2K pF Chip Capacitors 20K pF Chip Capacitors 10 μF, 50 V C

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev.

1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.

Typical Single - Carrier N - CDMA Perfo

MRFE6S9201HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* Qualified U