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MRFE6S9130HR3 RF Power FET

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Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and.

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Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 5

Applications

* with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
* Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg. , f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288

MRFE6S9130HR3 Distributors

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