MRFE6S9130HR3 Datasheet (Freescale Semiconductor)

MRFE6S9130HR3, RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.

Suitable for multicarrier amplifier applications.

Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.

PAR = 9.8

MRFE6S9130HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 5