* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* Qualified U
MRFE6S9201HSR3 Datasheet (526.88 KB)
MRFE6S9201HSR3
Motorola Semiconductor Products
526.88 KB
Rf power field effect transistors.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Chan.
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