Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev.1, 12/2008 RF Power Field Effect Transistors N - Chan.
Short RF Beads 33 pF Chip Capacitors 10 μF, 50 V Tantalum Capacitors 0.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* Qualified U
Applications
* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Wa
