Description
DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev.1, 7/2010 RF Power Field Effect Transistors N *Channel.
10 pF Chip Capacitors 0.
Features
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
Applications
* with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg. , IQ Magnitude Clippin
