* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
MRF8P20160HSR3 Datasheet (834.56 KB)
MRF8P20160HSR3
Motorola Semiconductor Products
834.56 KB
Rf power field effect transistors.
DataSheet.in
Freescale Semiconductor Technical Data
Document Number: MRF8P2160H Rev. 1, 7/2010
RF Power Field Effect Transistors
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*Channel.
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