MRFE6S9060NR1 Datasheet - Freescale Semiconductor

MRFE6S9060NR1 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS -.

MRFE6S9060NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9060N Rev. 1, 10/

MRFE6S9060NR1_FreescaleSemiconductor.pdf

MRFE6S9060NR1 Datasheet Preview — Preview of MRFE6S9060NR1 PDF

Datasheet Details

Part number:

MRFE6S9060NR1

Manufacturer:

Freescale Semiconductor

File Size:

629.53 KB

Description:

Rf power fet.

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