MRFE6S9060NR1 RF Power FET

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercia.

📥 Download Datasheet

MRFE6S9060NR1 Datasheet Preview — Preview of MRFE6S9060NR1 PDF

Datasheet Specifications

Part number: MRFE6S9060NR1
Manufacturer: Freescale Semiconductor
File Size: 629.53 KB
Datasheet: MRFE6S9060NR1_FreescaleSemiconductor.pdf
Description: RF Power FET

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9060N Rev. 1, 10/

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout =

MRFE6S9060NR1 Distributors

📁 Related Datasheet

MRFE6S9200HR3 - RF Power FET (Motorola Semiconductor Products)
MRFE6S9200HSR3 - RF Power FET (Motorola Semiconductor Products)
MRFE6S9201HR3 - RF Power Field Effect Transistors (Motorola Semiconductor Products)
MRFE6S9201HSR3 - RF Power Field Effect Transistors (Motorola Semiconductor Products)
MRFE6S8046GNR1 - RF Power Field Effect Transistors (Freescale)
MRFE6S8046NR1 - RF Power Field Effect Transistors (Freescale)

📌 All Tags

Power FET Freescale Semiconductor

Freescale Semiconductor MRFE6S9060NR1-like datasheet