Datasheet Specifications
- Part number
- MRFE6S9060NR1
- Manufacturer
- Freescale Semiconductor
- File Size
- 629.53 KB
- Datasheet
- MRFE6S9060NR1_FreescaleSemiconductor.pdf
- Description
- RF Power FET
Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercia.Features
* Characterized with Series Equivalent Large - Signal Impedance ParametersApplications
* with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.MRFE6S9060NR1 Distributors
📁 Related Datasheet
📌 All Tags