MRFE6VP61K25GSR5, MRFE6VP61K25HR6 RF Power LDMOS Transistors

NXP

MRFE6VP61K25GSR5 Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These h.

MRFE6VP61K25GSR5 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range
* Suitable for Linea

MRFE6VP61K25GSR5 Applications

* They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 24.0 74.0 22.9

📥 Download Datasheet

MRFE6VP61K25GSR5 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6VP61K25GSR5, MRFE6VP61K25HR6. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRFE6VP61K25GSR5, MRFE6VP61K25HR6
Manufacturer: NXP ↗
File Size: 967.15 KB
Datasheet: MRFE6VP61K25HR6_FreescaleSemiconductor.pdf
Description: RF Power LDMOS Transistors
Note: This datasheet PDF includes multiple part numbers: MRFE6VP61K25GSR5, MRFE6VP61K25HR6.
Please refer to the document for exact specifications by model.

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Power LDMOS Transistors NXP

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