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MRFE6VP61K25GSR5 Datasheet - NXP

MRFE6VP61K25GSR5 RF Power LDMOS Transistors

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100.

MRFE6VP61K25GSR5 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single

* Ended or in a Push

* Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range

* Suitable for Linea

MRFE6VP61K25GSR5 Datasheet (967.15 KB)

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Datasheet Details

Part number:

MRFE6VP61K25GSR5

Manufacturer:

NXP ↗

File Size:

967.15 KB

Description:

Rf power ldmos transistors.

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MRFE6VP61K25GSR5 Power LDMOS Transistors NXP

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