MRFE6VS25NR1 RF Power LDMOS Transistors

NXP

Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs RF power tra.

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Datasheet Specifications

Part number: MRFE6VS25NR1
Manufacturer: NXP ↗
File Size: 1.60 MB
Datasheet: MRFE6VS25NR1-NXP.pdf
Description: RF Power LDMOS Transistors

Features

* Wide operating frequency range
* Extreme ruggedness
* Unmatched, capable of very broadband operation
* Integrated stability enhancements
* Low thermal resistance
* Extended ESD protection circuit  2012, 2019 NXP B. V. RF Device Data NXP Semiconductors Document Number: MRF

Applications

* operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.8 to 30 (2,6) Two
* T

MRFE6VS25NR1 Distributors

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MRFE6VS25NR1 Power LDMOS Transistors NXP

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