* Wide operating frequency range
* Extreme ruggedness
* Unmatched, capable of very broadband operation
* Integrated stability enhancements
* Low thermal resistance
* Extended ESD protection circuit 2012, 2019 NXP B.V. RF Device Data NXP Semiconductors Document Number: MRF
MRFE6VS25NR1 Datasheet (1.60 MB)
MRFE6VS25NR1
1.60 MB
Rf power ldmos transistors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N
*Channel Enhancement
*Mode Lateral MOSFETs
RF power tra.
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