Datasheet Details
- Part number
- MRFE6VS25NR1
- Manufacturer
- NXP ↗
- File Size
- 1.60 MB
- Datasheet
- MRFE6VS25NR1-NXP.pdf
- Description
- RF Power LDMOS Transistors
MRFE6VS25NR1 Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs RF power tra.MRFE6VS25NR1 Features
* Wide operating frequency rangeMRFE6VS25NR1 Applications
* operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.8 to 30 (2,6) Two📁 Related Datasheet
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