MRFE6VP5600HSR6 Datasheet - Freescale Semiconductor

MRFE6VP5600HSR6 RF Power Field Effect Transistors

12 pF Chip Capacitor 27 pF Chip Capacitors 0.8 *8.0 pF Variable Capacitor, Gigatrim 33 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitors 0.1 μF Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 36 pF Chip Capacitor 51 pF Chip Capacitor 240 pF Chip Capacitors 39 pF Chip Capacitor .

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, betwe.

MRFE6VP5600HSR6 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single

* Ended or in a Push

* Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range

MRFE6VP5600HSR6 Datasheet (0.98 MB)