MRFE6VP5600HSR6, MRFE6VP5600HR6 RF Power Field Effect Transistors

Freescale Semiconductor

MRFE6VP5600HSR6 Description

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev.1, 1/2011 RF Power Field Effect Transistors High Rugg.
12 pF Chip Capacitor 27 pF Chip Capacitors 0. 8.

MRFE6VP5600HSR6 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range

MRFE6VP5600HSR6 Applications

* They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg. f (MHz) 230 230 Gps (dB) 25.0 24.6 ηD (%) 74.6 75.2

📥 Download Datasheet

MRFE6VP5600HSR6 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6VP5600HSR6, MRFE6VP5600HR6. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRFE6VP5600HSR6, MRFE6VP5600HR6
Manufacturer: Freescale Semiconductor
File Size: 0.98 MB
Datasheet: MRFE6VP5600HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRFE6VP5600HSR6, MRFE6VP5600HR6.
Please refer to the document for exact specifications by model.

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