MRFE6VP6300HSR3, MRFE6VP6300HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRFE6VP6300HSR3 Description

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev.1, 7/2011 RF Power Field Effect Transistors High Rugg.
15 pF Chip Capacitors 82 pF Chip Capacitor 91 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 0.

MRFE6VP6300HSR3 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range

MRFE6VP6300HSR3 Applications

* They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 26.5 25.0 ηD (%) 74.0 80.0

📥 Download Datasheet

MRFE6VP6300HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6VP6300HSR3, MRFE6VP6300HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRFE6VP6300HSR3, MRFE6VP6300HR3
Manufacturer: Freescale Semiconductor
File Size: 1.04 MB
Datasheet: MRFE6VP6300HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRFE6VP6300HSR3, MRFE6VP6300HR3.
Please refer to the document for exact specifications by model.

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