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MRFE6VP100HR5 RF Power LDMOS Transistors

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Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs RF powe.
Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite C1, C8 22 μF, 35 V Tantalum Capacitors T491X226K035AT.

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Features

* Wide Operating Frequency Range
* Extremely Rugged
* Unmatched, Capable of Very Broadband Operation
* Integrated Stability Enhancements
* Low Thermal Resistance
* Integrated ESD Protection Circuitry
* In Tape and Reel. R5 Suffix = 50 Units, 56

Applications

* operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD IMD (%) (dB

MRFE6VP100HR5 Distributors

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