MRFE6VP6300HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev.1, 7/2011 RF Power Field Effect Transistors High Rugg.
15 pF Chip Capacitors 82 pF Chip Capacitor 91 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 0.

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Datasheet Specifications

Part number: MRFE6VP6300HR3
Manufacturer: Freescale Semiconductor
File Size: 1.04 MB
Datasheet: MRFE6VP6300HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range

Applications

* They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 26.5 25.0 ηD (%) 74.0 80.0

MRFE6VP6300HR3 Distributors

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MRFE6VP6300HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRFE6VP6300HR3-like datasheet