MRFE6VP6300HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRFE6VP6300HR3, RF Power Field Effect Transistors

15 pF Chip Capacitors 82 pF Chip Capacitor 91 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 0.1 μF, 50 V Chip Capacitor 2.2 μF, 100 V Chip Capacitor 10 μF, 35 V Tantalum Capacitor 2.2 μF, 100 V Chip Capacitor 0.1 μF, 100 V Chip Capacitor 0.01 μF, 100 V Chip Capacitor 220 μF, 100

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev.

1, 7/2011 RF Power Field Effect Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

They are unmatched input and output designs allowing wide frequency range utilization, betwe

MRFE6VP6300HR3 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single

* Ended or in a Push

* Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range