MRFE6VP5600HR6 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev.1, 1/2011 RF Power Field Effect Transistors High Rugg.
12 pF Chip Capacitor 27 pF Chip Capacitors 0. 8.

📥 Download Datasheet

MRFE6VP5600HR6 Datasheet Preview — Preview of MRFE6VP5600HR6 PDF

Datasheet Specifications

Part number: MRFE6VP5600HR6
Manufacturer: Freescale Semiconductor
File Size: 0.98 MB
Datasheet: MRFE6VP5600HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range

Applications

* They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg. f (MHz) 230 230 Gps (dB) 25.0 24.6 ηD (%) 74.6 75.2

MRFE6VP5600HR6 Distributors

📁 Related Datasheet

MRFE6VP61K25GN MRFE6VP61K25GSR5 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25N MRFE6VS25GNR1

📌 All Tags

MRFE6VP5600HR6 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRFE6VP5600HR6-like datasheet