MRFE6VP5600HR6 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRFE6VP5600HR6, RF Power Field Effect Transistors

12 pF Chip Capacitor 27 pF Chip Capacitors 0.8 *8.0 pF Variable Capacitor, Gigatrim 33 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitors 0.1 μF Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 36 pF Chip Capacitor 51 pF Chip Capacitor 240 pF Chip Capacitors 39 pF Chip Capacitor

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev.

1, 1/2011 RF Power Field Effect Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

They are unmatched input and output designs allowing wide frequency range utilization, betwe

MRFE6VP5600HR6 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single

* Ended or in a Push

* Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range