MRFE6S8046GNR1, MRFE6S8046NR1 Datasheet - Freescale

MRFE6S8046GNR1, MRFE6S8046NR1, RF Power Field Effect Transistors

Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev.0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mo.
56 pF Chip Capacitors 3.

Features

* Class F Output Matched for Higher Impedances and Greater Efficiency
* Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched

Applications

* with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.
* Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.9 20 19.8 hD (%) 58.7 58.5 57.7 MRFE6S8046NR1 MRFE6S8046GNR1 864 - 894

MRFE6S8046NR1_Freescale.pdf