* Class F Output Matched for Higher Impedances and Greater Efficiency
* Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched
MRFE6S8046GNR1 Datasheet (467.17 KB)
MRFE6S8046GNR1
Freescale
467.17 KB
Rf power field effect transistors.
Freescale Semiconductor ‘ Technical Data
Document Number: MRFE6S8046N Rev. 0, 5/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mo.
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