* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Re
MRFE6S9125NBR1 Datasheet (637.60 KB)
MRFE6S9125NBR1
Freescale Semiconductor
637.60 KB
N-channel enhancement-mode lateral mosfets.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Chan.
📁 Related Datasheet
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9130HR3 RF Power FET (Freescale Semiconductor)
MRFE6S9130HSR3 RF Power FET (Freescale Semiconductor)
MRFE6S9135HR3 N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9135HSR3 N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9160HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6S9160HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6S9045NR1 RF Power FET (Freescale Semiconductor)
MRFE6S9060NR1 RF Power FET (Freescale Semiconductor)
MRFE6S9200HR3 RF Power FET (Motorola Semiconductor Products)
TAGS
Image Gallery
