MRFE6S9125NBR1 Datasheet (Freescale Semiconductor) - N-Channel Enhancement-Mode Lateral MOSFETs

MRFE6S9125NBR1, N-Channel Enhancement-Mode Lateral MOSFETs

20 pF Chip Capacitor 6.2 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitors, Gigatrim 11 pF Chip Capacitors 0.56 μF, 50 V Chip Capacitors 47 μF, 16 V Tantalum Capacitors 47 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 5.1 pF Chip Capacitors 0.3 pF Chip Capacitor 39 pF

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev.

0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

N - CDMA Application Typical Single - Carri

MRFE6S9125NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Re