MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev.0, 10/2007 RF Power Field Effect Transistors N - Chan.
20 pF Chip Capacitor 6.

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Datasheet Specifications

Part number: MRFE6S9125NBR1
Manufacturer: Freescale Semiconductor
File Size: 637.60 KB
Datasheet: MRFE6S9125NBR1_FreescaleSemiconductor.pdf
Description: N-Channel Enhancement-Mode Lateral MOSFETs

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Re

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. N - CDMA Application
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,

MRFE6S9125NBR1 Distributors

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MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

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