MRFE6S9160HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRFE6S9160HR3, RF Power Field Effect Transistors

Part Number B1, B2 Ferrite Beads, Small 2743019447 C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT C5, C6 15 pF Chip Capacitors ATC100B150JT500XT C7, C8 12 pF Chip Capacitors A

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.

Suitable for multicarrier amplifier applications.

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Power Gai

MRFE6S9160HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 5