MRFE6S9160HSR3 Datasheet, Transistors, Freescale Semiconductor

MRFE6S9160HSR3 Features

  • Transistors
  • Characterized with Series Equivalent Large - Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation <

PDF File Details

Part number:

MRFE6S9160HSR3

Manufacturer:

Freescale Semiconductor

File Size:

537.16kb

Download:

📄 Datasheet

Description:

Rf power field effect transistors. Part Number B1, B2 Ferrite Beads, Small 2743019447 C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT C3, C11 0.8- 8.0 pF V

Datasheet Preview: MRFE6S9160HSR3 📥 Download PDF (537.16kb)
Page 2 of MRFE6S9160HSR3 Page 3 of MRFE6S9160HSR3

MRFE6S9160HSR3 Application

  • Applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
  • TTIDyrQapfif=cica1lC2So0idn0egmsleA8-

TAGS

MRFE6S9160HSR3
Power
Field
Effect
Transistors
Freescale Semiconductor

📁 Related Datasheet

MRFE6S9160HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and.

MRFE6S9125NBR1 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
.. Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Chan.

MRFE6S9125NR1 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
.. Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Chan.

MRFE6S9130HR3 - RF Power FET (Freescale Semiconductor)
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and.

MRFE6S9130HSR3 - RF Power FET (Freescale Semiconductor)
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and.

MRFE6S9135HR3 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
.. Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Chan.

MRFE6S9135HSR3 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
.. Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Chan.

MRFE6S9045NR1 - RF Power FET (Freescale Semiconductor)
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercia.

MRFE6S9060NR1 - RF Power FET (Freescale Semiconductor)
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercia.

MRFE6S9200HR3 - RF Power FET (Motorola Semiconductor Products)
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband merc.

Stock and price

NXP Semiconductors
RF MOSFET LDMOS 28V NI780
DigiKey
MRFE6S9160HSR3
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts