MRFE6S9160HSR3, MRFE6S9160HR3 Datasheet - Freescale Semiconductor

MRFE6S9160HSR3 RF Power Field Effect Transistors

Part Number B1, B2 Ferrite Beads, Small 2743019447 C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT C5, C6 15 pF Chip Capacitors ATC100B150JT500XT C7, C8 12 pF Chip Capacitors A.

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvngee.rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8, zSM:yVHnDzc.D, PP=Aa2Rg8in=Vg9o, .l8ts,dB @ 0.01% Probability on CCDF. Power Gai.

MRFE6S9160HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 5

MRFE6S9160HR3-FreescaleSemiconductor.pdf

MRFE6S9160HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6S9160HSR3, MRFE6S9160HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRFE6S9160HSR3, MRFE6S9160HR3

Manufacturer:

Freescale Semiconductor

File Size:

537.16 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRFE6S9160HSR3, MRFE6S9160HR3.
Please refer to the document for exact specifications by model.

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MRFE6S9160HSR3 MRFE6S9160HR3 Power Field Effect Transistors Freescale Semiconductor

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