MRFE6VP61K25GN Datasheet - NXP

MRFE6VP61K25GN RF Power LDMOS Transistors

Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type 87.5

MRFE6VP61K25GN Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single

* Ended or in a Push

* Pull Configuration

* Qualified up to a Maximum of 50 VDD Operation

* Characterized from 30 to 50 V for Extended Power Range

* Suitable for Linear

MRFE6VP61K25GN Datasheet (1.01 MB)