MRFE6VP61K25GN, MRFE6VP61K25N RF Power LDMOS Transistors

NXP

MRFE6VP61K25GN Description

Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev.2, 4/2015 RF Power LDMOS Transistors High Ruggedness N *Channel En.

MRFE6VP61K25GN Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified up to a Maximum of 50 VDD Operation
* Characterized from 30 to 50 V for Extended Power Range
* Suitable for Linear

MRFE6VP61K25GN Applications

* Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type 87.5
* 108 (1,2) CW 230 (3) Pulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24.1 23.0 D (%) 77.6 72.3

📥 Download Datasheet

MRFE6VP61K25GN Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6VP61K25GN, MRFE6VP61K25N. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRFE6VP61K25GN, MRFE6VP61K25N
Manufacturer: NXP ↗
File Size: 1.01 MB
Datasheet: MRFE6VP61K25N-NXP.pdf
Description: RF Power LDMOS Transistors
Note: This datasheet PDF includes multiple part numbers: MRFE6VP61K25GN, MRFE6VP61K25N.
Please refer to the document for exact specifications by model.

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