Description
Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev.2, 4/2015 RF Power LDMOS Transistors High Ruggedness N *Channel En.
Features
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified up to a Maximum of 50 VDD Operation
* Characterized from 30 to 50 V for Extended Power Range
* Suitable for Linear
Applications
* Their
unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
87.5
* 108 (1,2)
CW
230 (3)
Pulse (100 sec, 20% Duty Cycle)
Pout (W) 1309 CW 1250 Peak
Gps (dB) 24.1 23.0
D (%) 77.6 72.3
