MRFE6VP100HSR5, MRFE6VP100HR5 Datasheet (Freescale Semiconductor)

MRFE6VP100HSR5, MRFE6VP100HR5, RF Power LDMOS Transistors

Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite C1, C8 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C2, C9 120 pF Chip Capacitors ATC100B121JT500XT ATC C3 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C4, C5 56 pF Chip Capacitors ATC

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz.

These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

Typical Performance: VDD = 50 Volts Frequency (MHz)

MRFE6VP100HSR5 Features

* Wide Operating Frequency Range

* Extremely Rugged

* Unmatched, Capable of Very Broadband Operation

* Integrated Stability Enhancements

* Low Thermal Resistance

* Integrated ESD Protection Circuitry

* In Tape and Reel. R5 Suffix = 50 Units, 56