Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These h.
Features
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range
* Suitable for Linea
Applications
* They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type
Pout (W)
f (MHz)
Gps (dB)
D (%)
Pulse (100 sec, 20% Duty Cycle)
CW
1250 Peak 1250 CW
230 230
24.0 74.0 22.9