MRFE6VP61K25HR6_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRFE6VP61K25HSR5, MRFE6VP61K25HR6
Manufacturer:
File Size:
967.15 KB
Description:
Rf power ldmos transistors.
Note:
This datasheet PDF includes multiple part numbers: MRFE6VP61K25HSR5, MRFE6VP61K25HR6.
Please refer to the document for exact specifications by model.
MRFE6VP61K25HSR5, MRFE6VP61K25HR6, RF Power LDMOS Transistors
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100
MRFE6VP61K25HSR5 Features
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range
* Suitable for Linea
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