MRFE6P3300HR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev.0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode .
Ferrite Beads, Short 1.

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Datasheet Specifications

Part number: MRFE6P3300HR3
Manufacturer: Freescale Semiconductor
File Size: 448.23 KB
Datasheet: MRFE6P3300HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Designed for Push - Pull Operation Only
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant

Applications

* with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment.
* Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32

MRFE6P3300HR3 Distributors

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MRFE6P3300HR3 Power Field Effect Transistor Freescale Semiconductor

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