MRFE6VP61K25HR6 Datasheet (Freescale Semiconductor)

MRFE6VP61K25HR6, RF Power LDMOS Transistors

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Typical Performance: VDD = 50 Volts, IDQ = 100

MRFE6VP61K25HR6 Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single

* Ended or in a Push

* Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range

* Suitable for Linea