MRFE6VS25GNR1, MRFE6VS25NR1 RF Power LDMOS Transistors

NXP

MRFE6VS25GNR1 Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs RF power tra.

MRFE6VS25GNR1 Features

* Wide operating frequency range
* Extreme ruggedness
* Unmatched, capable of very broadband operation
* Integrated stability enhancements
* Low thermal resistance
* Extended ESD protection circuit  2012, 2019 NXP B. V. RF Device Data NXP Semiconductors Document Number: MRF

MRFE6VS25GNR1 Applications

* operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.8 to 30 (2,6) Two
* T

📥 Download Datasheet

MRFE6VS25GNR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6VS25GNR1, MRFE6VS25NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRFE6VS25GNR1, MRFE6VS25NR1
Manufacturer: NXP ↗
File Size: 1.60 MB
Datasheet: MRFE6VS25NR1-NXP.pdf
Description: RF Power LDMOS Transistors
Note: This datasheet PDF includes multiple part numbers: MRFE6VS25GNR1, MRFE6VS25NR1.
Please refer to the document for exact specifications by model.

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