Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs RF power tra.
Features
* Wide operating frequency range
* Extreme ruggedness
* Unmatched, capable of very broadband operation
* Integrated stability enhancements
* Low thermal resistance
* Extended ESD protection circuit
2012, 2019 NXP B. V. RF Device Data NXP Semiconductors
Document Number: MRF
Applications
* operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
1.8 to 30 (2,6)
Two
* T