* Wide operating frequency range
* Extreme ruggedness
* Unmatched, capable of very broadband operation
* Integrated stability enhancements
* Low thermal resistance
* Extended ESD protection circuit 2012, 2019 NXP B.V. RF Device Data NXP Semiconductors Document Number: MRF
MRFE6VS25GNR1 Datasheet (1.60 MB)
MRFE6VS25GNR1
1.60 MB
Rf power ldmos transistors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N
*Channel Enhancement
*Mode Lateral MOSFETs
RF power tra.
📁 Related Datasheet
MRFE6VS25NR1 RF Power LDMOS Transistors (NXP)
MRFE6VP100HR5 RF Power LDMOS Transistors (Freescale Semiconductor)
MRFE6VP100HSR5 RF Power LDMOS Transistors (Freescale Semiconductor)
MRFE6VP5600HR6 RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6VP5600HSR6 RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6VP61K25GN RF Power LDMOS Transistors (NXP)
MRFE6VP61K25GSR5 RF Power LDMOS Transistors (NXP)
MRFE6VP61K25HR5 RF Power LDMOS Transistors (NXP)
MRFE6VP61K25HR6 RF Power LDMOS Transistors (Freescale Semiconductor)
MRFE6VP61K25HSR5 RF Power LDMOS Transistors (NXP)
