Datasheet Details
Part number:
MRFE6VS25GNR1, MRFE6VS25NR1
Manufacturer:
File Size:
1.60 MB
Description:
Rf power ldmos transistors.
Note:
This datasheet PDF includes multiple part numbers: MRFE6VS25GNR1, MRFE6VS25NR1.
Please refer to the document for exact specifications by model.
MRFE6VS25GNR1, MRFE6VS25NR1, RF Power LDMOS Transistors
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz.
These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Ty
MRFE6VS25GNR1 Features
* Wide operating frequency range
* Extreme ruggedness
* Unmatched, capable of very broadband operation
* Integrated stability enhancements
* Low thermal resistance
* Extended ESD protection circuit 2012, 2019 NXP B.V. RF Device Data NXP Semiconductors Document Number: MRF
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