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MRFE6VS25GNR1 Datasheet - NXP

MRFE6VS25GNR1 RF Power LDMOS Transistors

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Ty.

MRFE6VS25GNR1 Features

* Wide operating frequency range

* Extreme ruggedness

* Unmatched, capable of very broadband operation

* Integrated stability enhancements

* Low thermal resistance

* Extended ESD protection circuit  2012, 2019 NXP B.V. RF Device Data NXP Semiconductors Document Number: MRF

MRFE6VS25GNR1 Datasheet (1.60 MB)

Preview of MRFE6VS25GNR1 PDF

Datasheet Details

Part number:

MRFE6VS25GNR1

Manufacturer:

NXP ↗

File Size:

1.60 MB

Description:

Rf power ldmos transistors.

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MRFE6VS25GNR1 Power LDMOS Transistors NXP

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