MRFE6S9130HSR3, MRFE6S9130HR3 Datasheet - Freescale Semiconductor

MRFE6S9130HSR3 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8.

MRFE6S9130HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 5

MRFE6S9130HR3_FreescaleSemiconductor.pdf

MRFE6S9130HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6S9130HSR3, MRFE6S9130HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRFE6S9130HSR3, MRFE6S9130HR3

Manufacturer:

Freescale Semiconductor

File Size:

452.86 KB

Description:

Rf power fet.

Note:

This datasheet PDF includes multiple part numbers: MRFE6S9130HSR3, MRFE6S9130HR3.
Please refer to the document for exact specifications by model.

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MRFE6S9130HSR3 MRFE6S9130HR3 Power FET Freescale Semiconductor

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