MRFE6S9130HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRFE6S9130HSR3, MRFE6S9130HR3
Manufacturer:
Freescale Semiconductor
File Size:
452.86 KB
Description:
Rf power fet.
Note:
This datasheet PDF includes multiple part numbers: MRFE6S9130HSR3, MRFE6S9130HR3.
Please refer to the document for exact specifications by model.
MRFE6S9130HSR3, MRFE6S9130HR3, RF Power FET
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Suitable for multicarrier amplifier applications.
Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8
MRFE6S9130HSR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 5
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