* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Optim
MRFE6S9135HR3 Datasheet (481.02 KB)
MRFE6S9135HR3
Freescale Semiconductor
481.02 KB
N-channel enhancement-mode lateral mosfets.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Chan.
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