MRF8S7235NR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF8S7235NR3, RF Power Field Effect Transistor

Part Number MPZ2012S300A C5750KF1H226ZT C3225JB1H335MT ATC100B680JT500XT ATC100B120JT500XT ATC100B100CT500XT ATC100B2R7CT500XT ATC100B111JT500XT ATC100B3R6CT500XT ATC100B150JT500XT ATC100B6R2CT500XT ATC100B8R2CT500XT ATC100B3R3CT500XT ATC100B1R0BT500XT ATC100B390JT500XT MCGPR63V477M13X26-RH CRCW1206

Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev.

0, 6/2012 RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel

MRF8S7235NR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative