MRF8S7235NR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev.0, 6/2012 RF Power Field Effect Transistor N *Channel Enhancement Part Number MPZ2012S300A C5750KF1H226ZT C3225JB1H335MT ATC100B680JT500XT ATC100B120JT500XT ATC100B100CT500XT ATC100B2R7CT500XT ATC100B111JT500XT ATC10.

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Datasheet Specifications

Part number: MRF8S7235NR3
Manufacturer: Freescale Semiconductor
File Size: 449.91 KB
Datasheet: MRF8S7235NR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative

Applications

* with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.8

MRF8S7235NR3 Distributors

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MRF8S7235NR3 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF8S7235NR3-like datasheet