* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Vol
MRF8S7170NR3 Datasheet (365.37 KB)
MRF8S7170NR3
Freescale Semiconductor
365.37 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF8S7170N Rev. 0, 2/2010
www.DataSheet4U.com
RF Power Field Effect Transistor
N-Channel Enh.
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