MRF8S7170NR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF8S7170NR3, RF Power Field Effect Transistor

Ferrite Bead, Short 2.7 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitors 47 μF, 63 V Electrolytic Capacitor 6.8 μF, 100 V Chip Capacitor 100 pF Chip Capacitor 11 pF Chip Capacitors 6.8 pF Chip Capacitors 7.5 pF Chip Capacitors 5.1 pF Chip Capacitor 39 pF Chip Capacitors 10 μF, 25 V Chi

Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev.

0, 2/2010 www.DataSheet4U.com RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3

MRF8S7170NR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Vol