MRF8S7170NR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev.0, 2/2010 www.DataSheet4U.com RF Power Field Effect Transistor N-Channel Enh.
Ferrite Bead, Short 2.

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Datasheet Specifications

Part number: MRF8S7170NR3
Manufacturer: Freescale Semiconductor
File Size: 365.37 KB
Datasheet: MRF8S7170NR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Vol

Applications

* with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Sig

MRF8S7170NR3 Distributors

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MRF8S7170NR3 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF8S7170NR3-like datasheet