212A Datasheet | Specifications & PDF Download

ILLUMINANT PRODUCT SPECIFICATION FOR TFT LCM    CUSTOMER:  MODEL NO:  ACCEPTED BY:  APPROVED BY:        2012.12.3 Zhang 2012.12.3 He   I1513­6SEN1

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SFH-1212A/1412A 1. Specification Rated current Size Electrode Fuse resistance (Typical) Operating voltage Heater resistance Operating electric power R

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BC212 BC212A BC212B SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP

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P1212AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 120V 12mΩ @VGS = 10V ID 75A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 2

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INTEGRATED CIRCUITS SA5212A Transimpedance amplifier (140MHz) Product specification Replaces datasheet NE/SA/SE5212A of 1995 Apr 26 IC19 Data Handbo

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Philips Semiconductors Transimpedance amplifier (140MHz) Product specification NE/SA/SE5212A DESCRIPTION The NE/SA/SE5212A is a 14kΩ transimpedance,

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R5460x2xx SERIES Li-ION/POLYMER 2-CELL PROTECTOR NO.EA-165-160603 OUTLINE The R5460x2xxxx Series are high voltage CMOS-based protection ICs for ove

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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Magnetic Transducer (without driving circuit) KPM-1205A series Magnetic Buzzer FREQUENCY RESPONSE [actual curve of type] DIMENSIONS 34 Bottom View

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Magnetic Buzzer (with driving circuit ) KPX-1200A series Magnetic Buzzer DIMENSIONS 100dB 85 75 65 55 105dB 95 85 20mA 75 15 65 30mA 15 1.3

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Freescale Semiconductor Data Sheet: Technical Data Document Number: MMA52xxAKW Rev. 0, 09/2012 Xtrinsic MMA52xxAKW PSI5 Inertial Sensor The MMA52xxA

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isc N-Channel MOSFET Transistor 2SK4212A FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Re

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2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Abso

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R5460x2xx SERIES Li-ION/POLYMER 2-CELL PROTECTOR NO.EA-165-160603 OUTLINE The R5460x2xxxx Series are high voltage CMOS-based protection ICs for ove

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors

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