2363 Datasheet | Specifications & PDF Download

PD3.0 、 2~5 30W 1 IP2363   BUCK-BOOST NMOS  30W  2 IP2363 、 2~5  ：2/3/4/5      ， 30W  5~20V k  （4.20V） （3.65V） e 

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Photocouplers Infrared LED & Photo IC TLP2363 TLP2363 1. Applications • Programmable Logic Controllers (PLCs) (IEC 61131-2) • Factory Automation (FA

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OPA4364 ® OPA2364 OPA2363 OPA4364 OPA363 OPA363 OPA2363 OPA364 OPA2364 OPA4364 SBOS259B – SEPTEMBER 2002 – REVISED FEBRUARY 2003 1.8V, 7MHz, 90d

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SGA-2363 Product Description The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provid

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LZ2363B/LZ2364BJ LZ2363B/ LZ2364BJ DESCRIPTION The LZ2363B/LZ2364BJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes an

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16/32-Bit Architecture XC2361A, XC2363A, XC2364A, XC2365A 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Base Line Data

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16/32-Bit Architecture XC2361B, XC2363B, XC2364B, XC2365B 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Value Line Dat

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S7A323630M SS77AA332213863300MM S7A321830M 1Mx36 & 2Mx18 Sync-Pipelined Burst SRAM 1Mx36 & 2Mx18 Sync-Pipelined Burst SRAM 36Mb Sync. Pipelined Burs

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S7B323635M SS77BB332213863355MM S7B321835M 1Mx36 & 2Mx18 Flow-Trough SRAM 1Mx36 & 2Mx18 Flow-Trough SRAM 36Mb Sync. Flow-Trough SRAM Specification

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SGA-2363 Product Description The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provid

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Plastic Film Capacitors Metallized Polypropylene Film Capacitor Type : ECWH(V) Designed for high frequency and pluse applications. ■ Features • Lo

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www.DataSheet4U.com CMOS SyncBiFIFOTM WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2 .EATURES: • • • • • • • IDT723624 IDT723634 IDT72

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K7B323635C K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync. Burst SRAM Specification 100LQFP with Pb / Pb-Free (RoHS compliant) INFORMATION IN

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K7N323631C K7N321831C 1Mx36 & 2Mx18 Pipelined NtRAMTM 36Mb NtRAMTM Specification 100TQFP/165FBGA with Pb / Pb-Free (RoHS compliant) INFORMATION IN

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Alfa-MOS Technology General Description AFP2363AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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CMOS SyncFIFO™ 512 x 36, 1024 x 36, 2048 x 36 Integrated Device Technology, Inc. IDT723631 IDT723641 IDT723651 FEATURES: • Free-running CLKA and CLK

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CMOS SyncBiFIFO™ 256 x 36 x 2, 512 x 36 x 2, 1024 x 36 x 2 Integrated Device Technology, Inc. IDT723622 IDT723632 IDT723642 FEATURES: • Free-running

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Preliminary RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER 4 Typical Applications • GSM/DCS Dual-Band Handsets • Cellular/PCS Dual-Band Handsets • General

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SGC2363Z 50MHz to 4000 MHz Active Bias Silicon Germanium Cascadable Gain Block SGC2363Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE G

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