23S Datasheet | Specifications & PDF Download

Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623S Data Sheet Description The MGD623S is 600 V trench IGBT. Sanken original trench

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、 KP212X ⚫ 650V MOSFET ⚫ ◼ (SEL ) ◼ (SEL= GND) ⚫ ±4%、 ⚫ <70mW ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ： ◼ (SLP) ◼ (OTP) ◼ (OCP) ◼ (LEB) ◼ ◼ VDD ⚫ SOP-7/8、DIP-7

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IP6523S 3.4A OUTPUT STEP-DOWN CONVERTER with DCP PROTOCOLS 1 Features  Synchronous step-down converter  Built-in Power MOSFETs  Wide Input Volta

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High Power Lithium Ion APR18650M1A A123Systems’ lithium ion rechargeable APR18650M1A cell is capable of very high power, long cycle and storage life,

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July 2005 www.DataSheet4U.com rev 1.0 ASM3P623S00A/B/C/D/E/F Zero Cycle Slip Peak EMI reduction IC General Features ƒ ƒ ƒ Input frequency range: 20M

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P3P623S05A/B and P3P623S09A/B Timing-Safe™ Peak EMI Reduction IC General Features • Clock distribution with Timing-Safe™ Peak EMI Reduction • Input f

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P3P623S05A/B and P3P623S09A/B Timing-Safe™ Peak EMI Reduction IC General Features • Clock distribution with Timing-Safe™ Peak EMI Reduction • Input f

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ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor Datasheet The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mo

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GT23SC6699-1/2 Energy Harvesting NFC Forum Type 2 Tag with field detection pin and I2C interface----GT23SC6699-1/2 GT23SC6699-1/2 1 General Descripti

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BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-vol

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July 2005 www.DataSheet4U.com rev 1.0 ASM3P623S00A/B/C/D/E/F Zero Cycle Slip Peak EMI reduction IC General Features ƒ ƒ ƒ Input frequency range: 20M

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20V P-Channel MOSFETs PDEN2423S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Lead, H

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CYStech Electronics Corp. Advanced Schottky Barrier Diodes www.DataSheet4U.com Spec. No. : C343SN Issued Date : 2003.08.19 Revised Date :2003.12.05 P

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P3P623S05A/B and P3P623S09A/B Timing-Safe™ Peak EMI Reduction IC General Features • Clock distribution with Timing-Safe™ Peak EMI Reduction • Input f

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P3P623S00B, P3P623S00E Product Preview Timing-Safet Peak EMI Reduction IC Functional Description P3P623S00B/E is a versatile, 3.3 V Zero−delay buffer

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July 28, 2017 High Voltage ICs HIGH SIDE DRIVER IC AUIRS2123S/AUIRS2124S Features  Floating channel designed for bootstrap operation  Fully operati

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