ISL70023SEH 60A Enhancement Mode GaN Power Transistor

Intersil

Description

ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor Datasheet The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mo.
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Datasheet Specifications

Part number: ISL70023SEH
Manufacturer: Intersil
File Size: 522.12 KB
Datasheet: ISL70023SEH-Intersil.pdf
Description: 60A Enhancement Mode GaN Power Transistor

Features

* ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV
* cm2/mg(Si) ▪ ISL70023SEH radiation accepting testing
* High dose rate (50-300rad(Si)/s): 100krad(Si)

Applications

* for these devices include commercial aerospace, medical, and nuclear power generation. The GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.

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ISL70023SEH 60A Enhancement Mode GaN Power Transistor Intersil

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