ISL70024SEH - 7.5A Enhancement Mode GaN Power Transistor

Intersil

Datasheet Details

Part number	ISL70024SEH
Manufacturer	Intersil
File Size	471.91 KB
Description	7.5A Enhancement Mode GaN Power Transistor
Datasheet	ISL70024SEH-Intersil.pdf

4 3. Specifications . .

▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details).
SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV.
cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report).
High dose rate (50-300rad(Si)/s): 100krad(Si).
Low dose rate (0.01rad(Si)/s): 75krad(Si) ▪ ISL73024SEH radiation acceptance (see TID report).
Low dose rate (0.01rad(Si)/s): 75krad(Si) ▪ Ultra small hermetically sealed 4 Ld.

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Published: Apr 17, 2019 |