* ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV
* cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report)
* High dose rate (50-300rad(Si)/s): 100krad
ISL70024SEH Datasheet (471.91 KB)
ISL70024SEH
Intersil
471.91 KB
7.5a enhancement mode gan power transistor.
ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement m.
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