ISL70024SEH 7.5A Enhancement Mode GaN Power Transistor

Intersil

Description

ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement m.
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Datasheet Specifications

Part number: ISL70024SEH
Manufacturer: Intersil
File Size: 471.91 KB
Datasheet: ISL70024SEH-Intersil.pdf
Description: 7.5A Enhancement Mode GaN Power Transistor

Features

* ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV
* cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report)
* High dose rate (50-300rad(Si)/s): 100krad

Applications

* for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR.

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ISL70024SEH 7.5A Enhancement Mode GaN Power Transistor Intersil

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