256K-BIT datasheet | Specifications & PDF Download

HY29F400TG55 (Hynix Semiconductor)

4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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K6F4016U4G-F (Samsung semiconductor)

256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4016U4G Family Preliminary CMwwOwS.DaStaSRheAet4MU.com Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision

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M27W400 (STMicroelectronics)

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC

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HY534256 (Hynix Semiconductor)

256K x 4-Bit CMOS DRAM

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M5M4256L-15 (Mitsubishi)

256K-Bit DRAM

MITSUBISHI LSls M5M4256L-12, -15, -20 262 144-BIT (262 144-WORDBY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by l-bit dynamic RA

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M5M4256L-20 (Mitsubishi)

256K-Bit DRAM

MITSUBISHI LSls M5M4256L-12, -15, -20 262 144-BIT (262 144-WORDBY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by l-bit dynamic RA

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M5M4257S-15 (Mitsubishi)

256K-Bit DRAM

MITSUBISHI LSls MSM42S7S·12, -15, -20 262 i44-BIT (262 i44-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 l44-word by l-bit dynamic R

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M5M42S6S-15 (Mitsubishi)

256K-Bit DRAM

MITSUBISHI LSls MSM42S6S-12, -15, -20 262 144-BIT (262 144-WORD BY 1-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic R

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AT29BV020 (ATMEL Corporation)

2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

AT29BV020 Features • • • • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programmi

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M5M4256P-15 (Mitsubishi)

256K-Bit DRAM

MITSUBISHI LSls M5M4256P-12, -15, -20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a fami Iy of 262 144-word by 1-bit dynamic

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M27C400 (STMicroelectronics)

4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM

M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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M27W402 (STMicroelectronics)

4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W402 4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 80ns at VCC = 3.0V to 3.

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41C16257 (Integrated Silicon Solution Inc)

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

IS41C16257 IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES • • • • • • Fast access and cycle time TTL compatible inputs and ou

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