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AT49LV4096 - 4-Megabit (256K x 16) 3-volt Only CMOS Flash Memory

Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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ISSI

IS61LF51218 - (IS61LF25632 / IS61LF25636 / IS61LF51218) 256Kx32 Synchronous Flow-through Static RAM

( DataSheet : www.DataSheet4U.com ) IS61LF25632T/D/J IS61LF25636T/D/J IS61LF51218T/D/J 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS FLOW-THROUGH STATI

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ATMEL Corporation

AT28C256 - 256K (32K x 8) Paged Parallel EEPROM

Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer •

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ATMEL

AT49BV004T - 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory

Features • 2.7V to 3.6V Read/Write Operation • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (1

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ATMEL Corporation

AT29C432 - 4 Megabit 5-volt Flash with 256K E2PROM Memory

Features • • • • • ConcurrentFlash™ Memory Unique Architecture Allows the Flash Array To Be Read During the E2PROM Write Cycle 4 Megabit 5-volt Fla

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ATMEL

AT49LV002 - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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ATMEL

AT49LV002NT - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Integrated Silicon Solution

IS61C25616AS - 256K x 16 HIGH-SPEED CMOS STATIC RAM

IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access t

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NMB Technologies

AAA1M304 - Fast Page Mode CMOS 256K x 4 DRAM

w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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G-Link

GLT44016 - 256K X 16 CMOS DYNAMIC RAM

www.DataSheet4U.com G -LINK GLT44016 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug, 2000(Rev.3.1) Features : ∗ ∗ ∗ ∗ ∗ ∗ ∗ 262,144 words

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ISSI

IS61WV25616BLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JULY 2022 FEATURES HIGH SPEED: (IS61/64WV

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ISSI

IS61WV2568FALL - 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS61/64WV2568FALL IS61/64WV2568FBLL 256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM AUGUST 2020 KEY FEATURES  High-speed access time: 8, 10ns, 12ns 

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ATMEL

AT49LV002N - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

(22 views)