256k-Bit Datasheet | Specifications & PDF Download

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00021-2v0-E 256 K (32 K × 8) Bit SPI MB85RS256B ■ DESCRIPTION MB85RS256B is a FRAM (Ferroelectri

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00023-0v01-E 2 M (256 K × 8) Bit SPI MB85RS2MT ■ DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric

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Ordering number : ENA1190B CMOS IC LE25FW203A Overview 2M-bit (256K×8) Serial Flash Memory 30MHz SPI Bus The LE25FW203A is an onboard programmable

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PDM41256 256K Static RAM 32K x 8-Bit Features s High-speed access times Com’l: 7, 8, 10, 12, and 15 ns Ind’l: 8, 10, 12, and 15 ns s Low power operati

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FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K (32 K × 8) Bit I2C MB85RC256V ■ DESCRIPTION The MB85RC256V is an FRAM (Ferro

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E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n

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MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum

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Features • • • • • • • • • • • • • Fast Read Access Time - 90 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase an

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MITSUBISHI LSls M5M4256P-12, -15, -20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a fami Iy of 262 144-word by 1-bit dynamic

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MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption –

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PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low

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MR45V256A FEDR45V256A-01 Issue Date: Nov. 12, 2013 256k(32,768-Word  8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The

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