25T Datasheet | Specifications & PDF Download

IKW25N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter C

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IP6525T 18W OUTPUT STEP-DOWN CONVERTER with FAST CHARGE PROTOCOLS (DCP/QC2.0/QC3.0/FCP/AFC) 1 Features  Synchronous step-down converter  Built-i

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EN25T80 EN25T80 8 Mbit Uniform Sector, Serial Flash Memory with Dual Data Mode FEATURES • Single power supply operation - Full voltage range: 2.7-3.6

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DS182 (v2.16) May 8, 2017 Kintex-7 FPGAs Data Sheet: DC and AC Switching Characteristics Product Specification Introduction Kintex®-7 FPGAs are avai

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FDP33N25 / FDPF33N25T 250V N-Channel MOSFET October UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features • • • • • 33A, 250V, RDS(on) = 0.094

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WESTCODE An IXYS Company Date:- 4 Aug, 2004 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0500KC25# Absolute Maximum Ratings

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25TTS High Voltage Series Vishay High Power Products Phase Control SCR, 25 A 2 (A) TO-220AB 1 (K) (G) 3 PRODUCT SUMMARY VT at 16 A ITSM VRRM <

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TLE4973-xxxxT5-S0001 Datasheet XENSIV™ high accuracy coreless current sensor for internal current rail applications Features • High accurate, scalab

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TrenchStop® Series IGW25T120 Low Loss IGBT in TrenchStop® and Fieldstop technology • Short circuit withstand time – 10µs • Designed for : - Frequenc

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TLE4973-xxxxT5-S0001 Datasheet XENSIV™ high accuracy coreless current sensor for internal current rail applications Features • High accurate, scalab

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Real time clock module Epson Toyocom Built-in 32.768 kHz-DTCXO, High Stability I2C-Bus INTERFACE REAL TIME CLOCK MODULE RX – 8025T Product Number (

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N AND P-CHANNEL MOSFET GENERAL DESCRIPTION The SFS4525T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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FDPF44N25T — N-Channel UniFETTM MOSFET FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features • RDS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 2

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SKiiP 32 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40

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Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integr

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Multilayer Ceramic Chip Capacitors FEATURES • X7R, X5R AND Y5V DIELECTRICS • HIGH CAPACITANCE DENSITY • ULTRA LOW ESR & ESL • EXCELLENT MECHANICAL STR

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MBQ25T120FESC 1200V Fieldstop Trench IGBT MBQ25T120FESC High speed Fieldstop Trench IGBT General Description This IGBT is produced using advanced M

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EN25T16 EN25T16 16 Mbit Uniform Sector, Serial Flash Memory with Dual Data Mode FEATURES • Single power supply operation - Full voltage range: 2.7-3.

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