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27256 Datasheet, Features, Application

27256 NMOS 256K 32K x 8 UV EPROM

M74HC51 DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE s .

Toshiba
rating-1 17

TMM27256AD - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

TOSHIBA MOS MEMORY PRODUCT 32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM27256AD-15, TMM27256AD-150 SILIC.
Toshiba
rating-1 9

TMM27256AD-20 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

TOSHIBA MOS MEMORY PRODUCT 32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM27256AD-15, TMM27256AD-150 SILIC.
ST Microelectronics
rating-1 9

27256 - NMOS 256K 32K x 8 UV EPROM

M74HC51 DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE s s s s s s s HIGH SPEED: tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) a.
General Semiconductor
rating-1 9

27256 - 256K (32k x 8) Bit NMOS UV Erasable PROM

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STMicroelectronics
rating-1 9

27256 - NMOS 256K 32K x 8 UV EPROM

M74HC51 DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE s s s s s s s HIGH SPEED: tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) a.
Fujitsu
rating-1 7

MBM27256-25 - MOS Memories

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
STMicroelectronics
rating-1 6

M27256 - NMOS 256K 32K x 8 UV EPROM

M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMP.
Toshiba
rating-1 5

TMM27256AD-15 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

TOSHIBA MOS MEMORY PRODUCT 32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM27256AD-15, TMM27256AD-150 SILIC.
Toshiba
rating-1 5

TMM27256BP-20 - EPROM

www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com www.DataSh.
Fujitsu
rating-1 5

MBM27256-20 - MOS Memories

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
Fujitsu
rating-1 5

MBM27256-30 - MOS Memories

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
AMD
rating-1 5

AM2764A - (AM2764A - AM27256) 8-Bit OTPROM

www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
AMD
rating-1 5

AM27256 - (AM2764A - AM27256) 8-Bit OTPROM

www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
Mitsubishi
rating-1 5

M5L27256K - Erasable and Electrically Reprogrammable ROM

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Toshiba
rating-1 4

TMM27256BD-15 - 32K x 8-Bit EEPROM

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Toshiba
rating-1 4

TMM27256BD - 32K x 8-Bit EEPROM

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AMD
rating-1 4

AM27128A - (AM2764A - AM27256) 8-Bit OTPROM

www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
Toshiba
rating-1 4

TMM27256BD-20 - 32K x 8-Bit EEPROM

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Toshiba
rating-1 3

TMM27256ADI-20 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

TOSHIBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT N·MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY SILICON STACKED GATE MOS TMM27256ADI.
Fujitsu
rating-1 3

MBM27256 - MOS Memories

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
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