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M27C512 - 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump.FM27C512 - High Performance CMOS EPROM
FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM .. May 2001 FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM General De.D27C512 - UPD27C512
www.DataSheet4U.com w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D at h S a t e e 4U . .MBM27C512-25 - C-MOS 512K-BIT EPROM
C-MOS 512 K (65,536 x 8)-BIT EPROM —TOP VIEW— MBM27C512-25 (1/2) IL08D A15 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 VDD 28 27 A14 26 A13 25 A8 24.W27C512 - 64K X 8 ELECTRICALLY ERASABLE EPROM
W27C512 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C512 is a high speed, low power Electrically Erasable and Programmable Read O.UPD27C512 - 65536 x 8-Bit CMOS UV EPROM
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w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D at h S a t e e 4U . m o c .MD27C512 - 512K CHMOS EPROM
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .NMC27C512 - High Performance CMOS PROM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.NM27C512 - High Performance CMOS EPROM
www.DataSheet4U.com NM27C512 524 288-Bit (64K x 8) High Performance CMOS EPROM February 1994 NM27C512 524 288-Bit (64K x 8) High Performance CMOS E.AT27C512R - 512K (64K x 8) One-time Programmable Read-only Memory
Features • Fast read access time – 45ns • Low-power CMOS operation – 100µA max standby – 20mA max active at 5MHz • JEDEC standard packages – 28-lead P.TMS27C512 - Programmable ROM
D Organization . . . 65 536 by 8 Bits D Single 5-V Power Supply D Pin Compatible With Existing 512K MOS ROMs, PROMs, and EPROMs D All Inputs/Output.AT27C512R - 512-Kbit PROM
AT27C512R 512-Kbit (64K x 8) One-Time Programmable, Read‑Only Memory Features • Fast Read Access Time: 45 ns • Low-Power CMOS Operation: – 100 μA maxi.