27C512 Datasheet | Specifications & PDF Download

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W27C512 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C512 is a high speed, low power Electrically Erasable and Programmable Read O

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M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump

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FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM .. May 2001 FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM General De

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www.DataSheet4U.com NM27C512 524 288-Bit (64K x 8) High Performance CMOS EPROM February 1994 NM27C512 524 288-Bit (64K x 8) High Performance CMOS E

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M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump

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C-MOS 512 K (65,536 x 8)-BIT EPROM —TOP VIEW— MBM27C512-25 (1/2) IL08D A15 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 VDD 28 27 A14 26 A13 25 A8 24

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Features • Fast read access time – 45ns • Low-power CMOS operation – 100µA max standby – 20mA max active at 5MHz • JEDEC standard packages – 28-lead P

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AT27C512R 512-Kbit (64K x 8) One-Time Programmable, Read‑Only Memory Features • Fast Read Access Time: 45 ns • Low-Power CMOS Operation: – 100 μA maxi

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HT27C512 CMOS 64K´8-Bit OTP EPROM Features · Operating voltage: +5.0V · Programming voltage - VPP=12.2V±0.2V - VCC=5.8V±0.2V · High-reliability CMOS

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NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM July 1998 NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM General Description

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